TQP7M9106数据手册Qorvo中文资料规格书

描述 Description

Qorvo's TQP7M9106 is a 2W 5V high-linearity driver amplifier in a standard 4x4mm QFN package. At 0.9 GHz, the TQP7M9106 offers 20.8 dB gain, ultra-high 50 dBm OIP3, and +33 dBm of compressed 1dB power while drawing 455 mA current. Internal circuitry allows the amplifier to offer 'Class A' linearity performance with 'Class AB' efficiency. The TQP7M9106 contains added patented features implemented on-chip that differentiates it from other products in the market. The amplifier contains RF overdrive protection allowing the device to be very rugged. The internal active bias allows the amplifier to operate off of a 5V supply but also provides DC overvoltage protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. On-chip ESD protection allows the amplifier to have a very robust Class 1C HBM ESD rating. The device is housed in a lead-free / green / RoHS-compliant, industry-standard 4x4mm QFN surface-mount package. The device is ideal for 3G / 4G small cell base stations, high power amplifiers, repeaters, Defense communications, or any other general wireless application in the 50-1500 MHz frequency range requiring high linearity.

特性 Features

• 50 to 1500 MHz
• +33 dBm P1dB
• +50 dBm OIP3
• 20.8 dB @ 900 MHz
• +5 V single supply, 455 mA collector current
• Patented internal DC overvoltage and RF overdrive protection
• High Class 1C HBM ESD rating
• Internal temp-compensation
• Capable of handling 10:1 VSWR @ 5 Vcc, 0.9 GHz, 32.8 dBm CW Pout or 23.5 dBm WCDMA Pout

应用 Application

• 3G / 4G Wireless Infrastructure
• High Power Amplifiers
• Small Cell Base Station
• Repeaters
• Defense / Homeland Security
• Communication Systems