TQP7M9102数据手册Qorvo中文资料规格书

描述 Description

Qorvo's TQP7M9102 is a high linearity driver amplifier in a low-cost, RoHS compliant, surface mount package. This InGaP / GaAs HBT delivers high performance across a broad range of frequencies with +44 dBm OIP3 and +27.5 dBm P1dB while only consuming 135 mA quiescent current. All devices are 100% RF and DC tested.
The part incorporates on-chip features that differentiate it from other products in the market. The amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. On-chip ESD protection allows the amplifier to have a very robust Class2 HBM ESD rating.
The TQP7M9102 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power and high efficiency are required. The device is an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G / 4G base stations.

特性 Features

• 400 to 4000 MHz
• +27.5 dBm P1dB
• +44 dBm Output IP3
• 17.8 dB gain @ 2140 MHz
• +5 V single supply, 135 mA current
• Internal RF overdrive protection
• Internal DC overvoltage protection
• On-chip ESD protection
• SOT-89 package

应用 Application

• 3G / 4G Wireless Infrastructure
• Base Station Transceivers
• Femtocells
• General Purpose Wireless
• Repeaters