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TPS7H6015MDCATSEP

TPS7H60x5-SPandTPS7H60x5-SEPRadiation-Hardness-AssuredHalfBridgeGaNFETGateDrivers

1Features •Radiationperformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventtransient(SET),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneto linearenergytransfer(LET)=75MeV-cm2/mg –Single-eventtran

TI1Texas Instruments

德州仪器美国德州仪器公司

TPS7H6015-SEP

TPS7H60x5-SPandTPS7H60x5-SEPRadiation-Hardness-AssuredHalfBridgeGaNFETGateDrivers

1Features •Radiationperformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventtransient(SET),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneto linearenergytransfer(LET)=75MeV-cm2/mg –Single-eventtran

TI1Texas Instruments

德州仪器美国德州仪器公司

TPS7H6015-SEP

TPS7H60x5-SPandTPS7H60x5-SEPRadiation-Hardness-AssuredHalfBridgeGaNFETGateDrivers

1Features •Radiationperformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventtransient(SET),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneto linearenergytransfer(LET)=75MeV-cm2/mg –Single-eventtran

TI1Texas Instruments

德州仪器美国德州仪器公司

TPS7H6015-SEP

TPS7H60x5-SPandTPS7H60x5-SEPRadiation-Hardness-AssuredHalfBridgeGaNFETGateDrivers

1Features •RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventtransient(SET),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneto linearenergytransfer(LET)=75MeV-cm2/mg –Single-eventtran

TI1Texas Instruments

德州仪器美国德州仪器公司

供应商型号品牌批号封装库存备注价格
TI(德州仪器)
2024+
N/A
500000
诚信服务,绝对原装原盘
询价
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
询价
TI/德州仪器
25+
原厂封装
10280
询价
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业
询价
80000
询价
TI(德州仪器)
21+
USIP
10000
低于市场价,实单必成,QQ1562321770
询价
23+
NA
6800
原装正品,力挺实单
询价
24+
32000
全新原厂原装正品现货,低价出售,实单可谈
询价
TI德州仪器
22+
24000
原装正品现货,实单可谈,量大价优
询价
TI/德州
2018+
VQFN
32500
德州代理承诺销售原装正品公司可开正规17%增值税票
询价
更多TPS7H6015-SP供应商 更新时间2025-5-29 18:30:00