首页 >TPS7H2201YSLASHEM>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RadiationHardened1.5-Vto7-V,6-ALoadSwitch | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse 1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse 1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR) | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse 1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse 1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR) | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse 1Features •Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse 1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR) | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse 1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
TPS7H2201-SPRadiationHardened1.5-Vto7-V,6-ALoadSwitch 1Features 1•Radiationperformance: –Radiationhardnessassurance(RHA)upto TID100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)immunetoLET=75MeV-cm2/mg –SEFI/SETcharacterizedto LET=75MeV-cm2/mg •Integratedsingle | TITexas Instruments 德州仪器美国德州仪器公司 | TI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
2024+ |
N/A |
500000 |
诚信服务,绝对原装原盘 |
询价 | ||
24+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
TI |
25+ |
CFP (HKR) |
6000 |
原厂原装,价格优势 |
询价 | ||
TI |
23+ |
CFP-16 |
5000 |
全新原装正品现货 |
询价 | ||
TI |
25+ |
原封装 |
66330 |
郑重承诺只做原装进口现货 |
询价 | ||
Texas Instruments |
23+/24+ |
32-TSSOP |
8600 |
只供原装进口公司现货+可订货 |
询价 | ||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
询价 | |||
TI/德州仪器 |
25+ |
原厂封装 |
9999 |
询价 | |||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
询价 |
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