丝印：TPS73725；Package：SON；TPS737 1-A Low-Dropout Regulator With Reverse Current Protection

1 Features • Stable with 1-μF or larger ceramic output capacitor • Input voltage range: 2.2 V to 5.5 V • Ultra-low dropout voltage: 130 mV typical at 1 A • Excellent load transient response—even with only 1-μF output capacitor • NMOS topology delivers low reverse leakage current • Initial

文件：2.50188 Mbytes 页数：40 Pages

TI

德州仪器

丝印：TPS73725；Package：SOT-223；TPS737 1-A Low-Dropout Regulator With Reverse Current Protection

1 Features • Stable with 1-μF or larger ceramic output capacitor • Input voltage range: 2.2 V to 5.5 V • Ultra-low dropout voltage – Legacy silicon: 130 mV typical at 1 A – New silicon, M3 suffix: 122 mV typical at 1 A • Excellent load transient response—even with only 1-μF output capacitor

文件：3.36034 Mbytes 页数：49 Pages

TI

德州仪器

丝印：TPS73725；Package：SOT-223；TPS737 1-A Low-Dropout Regulator With Reverse Current Protection

1 Features • Stable with 1-μF or larger ceramic output capacitor • Input voltage range: 2.2 V to 5.5 V • Ultra-low dropout voltage: 130 mV typical at 1 A • Excellent load transient response—even with only 1-μF output capacitor • NMOS topology delivers low reverse leakage current • Initial

文件：2.50188 Mbytes 页数：40 Pages

TI

德州仪器

丝印：TPS73725；Package：SOT-223；TPS737 1A Low-Dropout Regulator With Reverse Current Protection

1 Features • Stable with 1μF or larger ceramic output capacitor • Input voltage range: 2.2V to 5.5V • Ultra-low dropout voltage – Legacy silicon: 130mV typical at 1A – New silicon: 122mV typical at 1A • Excellent load transient response—even with only 1μF output capacitor • NMOS topology d

文件：3.26478 Mbytes 页数：53 Pages

TI

德州仪器

丝印：TPS73725；Package：SOT-223；TPS737 1A Low-Dropout Regulator With Reverse Current Protection

1 Features • Stable with 1μF or larger ceramic output capacitor • Input voltage range: 2.2V to 5.5V • Ultra-low dropout voltage – Legacy silicon: 130mV typical at 1A – New silicon: 122mV typical at 1A • Excellent load transient response—even with only 1μF output capacitor • NMOS topology d

文件：3.26478 Mbytes 页数：53 Pages

TI

德州仪器

丝印：TPS73725；Package：SOT-223；TPS737 1-A Low-Dropout Regulator With Reverse Current Protection

1 Features • Stable with 1-μF or larger ceramic output capacitor • Input voltage range: 2.2 V to 5.5 V • Ultra-low dropout voltage – Legacy silicon: 130 mV typical at 1 A – New silicon, M3 suffix: 122 mV typical at 1 A • Excellent load transient response—even with only 1-μF output capacitor

文件：3.36034 Mbytes 页数：49 Pages

TI

德州仪器

丝印：TPS73725；Package：SOT-223；TPS737 1A Low-Dropout Regulator With Reverse Current Protection

1 Features • Stable with 1μF or larger ceramic output capacitor • Input voltage range: 2.2V to 5.5V • Ultra-low dropout voltage – Legacy silicon: 130mV typical at 1A – New silicon: 122mV typical at 1A • Excellent load transient response—even with only 1μF output capacitor • NMOS topology d

文件：3.26478 Mbytes 页数：53 Pages

TI

德州仪器

丝印：TPS73725；Package：SOT-223；TPS737 1-A Low-Dropout Regulator With Reverse Current Protection

1 Features • Stable with 1-μF or larger ceramic output capacitor • Input voltage range: 2.2 V to 5.5 V • Ultra-low dropout voltage: 130 mV typical at 1 A • Excellent load transient response—even with only 1-μF output capacitor • NMOS topology delivers low reverse leakage current • Initial

文件：2.50188 Mbytes 页数：40 Pages

TI

德州仪器

丝印：TPS73725；Package：SOT-223；TPS737 1-A Low-Dropout Regulator With Reverse Current Protection

1 Features • Stable with 1-μF or larger ceramic output capacitor • Input voltage range: 2.2 V to 5.5 V • Ultra-low dropout voltage – Legacy silicon: 130 mV typical at 1 A – New silicon, M3 suffix: 122 mV typical at 1 A • Excellent load transient response—even with only 1-μF output capacitor

文件：3.36034 Mbytes 页数：49 Pages

TI

德州仪器

丝印：TPS73725；Package：SOT-223；TPS737 1A Low-Dropout Regulator With Reverse Current Protection

1 Features • Stable with 1μF or larger ceramic output capacitor • Input voltage range: 2.2V to 5.5V • Ultra-low dropout voltage – Legacy silicon: 130mV typical at 1A – New silicon: 122mV typical at 1A • Excellent load transient response—even with only 1μF output capacitor • NMOS topology d

文件：3.26478 Mbytes 页数：53 Pages

TI

德州仪器