IRHI7360SE

TRANSISTORN-CHANNEL(BVdss=400V,Rds(on)=0.20ohm,Id=24.3A)

IRHI7360SE

SimpleDriveRequirements

IRHM7360

SimpleDriveRequirements

IRHM7360

REPETITIVEAVALANCHEANDdv/dtRATED

400Volt,0.22Ω,MEGARADHARDHEXFET InternationalRectifier’sRADHARDtechnologyHEXFETsdemonstrateexcellentthresholdvoltagestabilityandbreakdownvoltagestabilityattotalradiaitiondosesashighas1x106Rads(Si).Underidenticalpre-andpost-irradiationtestconditions,Internationa

IRHM7360SE

TRANSISTORN-CHANNEL(BVdss=400V,Rds(on)=0.20ohm,Id=22A)

RADHard™HEXFET®TECHNOLOGY InternationalRectifier’sRADHardTMHEXFET®MOSFETtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeencharacterizedforb

IRHM7360SE

SimpleDriveRequirements

IRHNA7360SE

SimpleDriveRequirements

IRHNA7360SE

TRANSISTORN-CHANNEL(BVdss=400V,RdS(on)=0.20ohm,Id=24.3A)

IRHNB7360SE

RADIATIONHARDENEDPOWERMOSFETSURFACEMOUNT(SMD-3)

LP7360

SMDUnshieldedPowerInductor

Features: •Provideshighpowerandhighsaturation •LP2618usesceramicbasewithgold-plating (allothersuseLCPplasticbase) •Operatingtemperaturerangeof-40ºCto+125ºC •UL94-V0compliant •100RoHScompliantandleadfreewithoutexemption •Halogenfree •REACHcompliant •C