首页 >TPS6188RHLR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PrecisionPotentiometer/PositionSensor | BITECHBi technologies 瑞谷拜特上海瑞谷拜特软件技术有限公司 | BITECH | ||
1.0ADualUSBHigh-SidePowerSwitch | AIC AIC Inc.（Advanced Industrial Computer, Inc.） | AIC | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,20A,RDS(ON)=25mW@VGS=10V. RDS(ON)=32mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,7.3A,RDS(ON)=26mW@VGS=10V. RDS(ON)=35mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-ChannelAdvancedPowerMOSFET Features VDS=60V,ID=9A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,7.4A,RDS(ON)=23mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=31mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
GaAsFETLowNoiseAmplifier | DAICO DAICO Industries, Inc. | DAICO | ||
2A,23V,340KHzSynchronousStep-DownConverter | FEELINGFeeling Technology Corp. 远翔科技远翔科技股份有限公司 | FEELING | ||
MediumPower50WattsRFLoadUpTo4GHzWithNMale | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK |
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