首页 >TPS60120DRCR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
REGULATED3.3V,200-mAHIGHEFFICIENCYCHARGEPUMPDC/DCCONVERTERS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
REGULATED200-mAHIGHEFFICIENCYCHARGEPUMPDC/DCCONVERTERS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
REGULATED200-mAHIGHEFFICIENCYCHARGEPUMPDC/DCCONVERTERS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
REGULATED3.3V,200-mAHIGHEFFICIENCYCHARGEPUMPDC/DCCONVERTERS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
MINIBRIDGE25,40,50and60AMPEREBRIDGERECTIFIERS MINIBRIDGE25,40,50and60AMPEREBRIDGERECTIFIERS INTEGRALLYMOLDED HEATSINKS PROVIDEVERYLOW THERMALRESISTANCE | edi Electronic devices inc. | edi | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.41VatIF=5A | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualHighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106 | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualHighVoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualHighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106 | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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