丝印：TPS40090；Package：VQFN；HIGH-FREQUENCY, MULTIPHASE CONTROLLER

FEATURES • Two-, Three-, or Four-Phase Operation • 5-V to 15-V Operating Range • Programmable Switching Frequency Up to 1-MHz/Phase • Current Mode Control With Forced Current Sharing(1) (1) Patent pending. • 1% Internal 0.7-V Reference • Resistive Divider Set Output Voltage • True Re

文件：896.5 Kbytes 页数：34 Pages

TI

德州仪器

90 W, RF Power GaN HEMT

Description Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain

文件：1.69173 Mbytes 页数：13 Pages

WOLFSPEED

90 W, RF Power GaN HEMT

文件：1.43751 Mbytes 页数：13 Pages

Cree

科锐

90 W, RF Power GaN HEMT

文件：1.43751 Mbytes 页数：13 Pages

Cree

科锐