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TPS28225DRBR

TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver

1 Features • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V • Wide Power System Train Input Voltage: 3V Up to 27V • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude • Capable to Drive MOSFETs with ≥40

文件:2.06215 Mbytes 页数:43 Pages

TI

德州仪器

TPS28225DRBR.A

TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver

1 Features • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V • Wide Power System Train Input Voltage: 3V Up to 27V • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude • Capable to Drive MOSFETs with ≥40

文件:2.06215 Mbytes 页数:43 Pages

TI

德州仪器

TPS28225DRBRG4

TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver

1 Features • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V • Wide Power System Train Input Voltage: 3V Up to 27V • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude • Capable to Drive MOSFETs with ≥40

文件:2.06215 Mbytes 页数:43 Pages

TI

德州仪器

TPS28225DRBRG4.A

TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver

1 Features • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V • Wide Power System Train Input Voltage: 3V Up to 27V • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude • Capable to Drive MOSFETs with ≥40

文件:2.06215 Mbytes 页数:43 Pages

TI

德州仪器

TPS28225DRBT

TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver

1 Features • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V • Wide Power System Train Input Voltage: 3V Up to 27V • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude • Capable to Drive MOSFETs with ≥40

文件:2.06215 Mbytes 页数:43 Pages

TI

德州仪器

TPS28225DRBT.A

TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver

1 Features • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V • Wide Power System Train Input Voltage: 3V Up to 27V • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude • Capable to Drive MOSFETs with ≥40

文件:2.06215 Mbytes 页数:43 Pages

TI

德州仪器

TPS28225DRBR

High-Frequency 4-A Sink Synchronous MOSFET Driver

文件:987.99 Kbytes 页数:30 Pages

TI

德州仪器

TPS28225DRBT

High-Frequency 4-A Sink Synchronous MOSFET Driver

文件:987.99 Kbytes 页数:30 Pages

TI

德州仪器

TPS28225DRBR

Package:8-VDFN 裸露焊盘;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 8SON

TI

德州仪器

TPS28225DRBT

Package:8-VDFN 裸露焊盘;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 8SON

TI

德州仪器

产品属性

  • 产品编号:

    TPS28225DRBR

  • 制造商:

    Texas Instruments

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 驱动配置:

    半桥

  • 通道类型:

    同步

  • 栅极类型:

    N 沟道 MOSFET

  • 电压 - 供电:

    4.5V ~ 8.8V

  • 电流 - 峰值输出(灌入,拉出):

    2A,2A

  • 输入类型:

    非反相

  • 上升/下降时间(典型值):

    10ns,10ns

  • 工作温度:

    -40°C ~ 125°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    8-VDFN 裸露焊盘

  • 供应商器件封装:

    8-SON(3x3)

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8SON

供应商型号品牌批号封装库存备注价格
TI
SON8
56371
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
TI
2016+
QFN8
10000
只做原装,假一罚十,公司可开17%增值税发票!
询价
TI
24+
SON8
5630
TI一级代理原厂授权渠道实单支持
询价
TI
17+
SON8
6000
保证原装正品!优势渠道供应
询价
TI/德州仪器
24+
SON8
2500
进口原装现货/假一赔十
询价
TI/德州仪器
23+
SON8
18204
原装正品代理渠道价格优势
询价
TI
2021+
QFN
9450
原装现货。
询价
Texas Instruments
24+
SON-8
90000
原装现货实单必成
询价
TI/德州仪器
21+
SON8
8080
只做原装,质量保证
询价
TI/德州仪器
2152+
SON8
8000
原装正品现货假一罚十
询价
更多TPS28225DRB供应商 更新时间2025-12-10 14:01:00