ULN2015L

HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS

[SPRAGUE] HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS

UPG2015TB

GaAsINTEGRATEDCIRCUIT

FEATURES •Supplyvoltage:VDD=2.7to3.0V(2.8VTYP.) •Switchcontrolvoltage:Vcont(H)=2.7to3.0V(2.8VTYP.) :Vcont(L)=−0.2to+0.2V(0VTYP.) •Lowinsertionloss:LINS1=0.25dBTYP.@f=0.5to1.0GHz,VDD=2.8V,Vcont=2.8V/0V :LINS2=0.30dBTYP.@f=1.

UPG2015TB

L,S-BANDSPDTSWITCH

UPG2015TB

1WSINGLECONTROLL,S-BANDSPDTSWITCH

DESCRIPTION NECsUPG2015TBisasinglecontrolsinglecontrolGaAsMMICL,S-bandSPDT(SinglePoleDoubleThrow)switchformobilephoneandL,S-bandapplications. Thisdevicecanoperatefrequencyfrom0.5to2.5GHz,withlowinsertionlossandhighisolation. Thisdeviceishousedina6-p

UPG2015TB

NECs1WSINGLECONTROLL,S-BANDSPDTSWITCH

DESCRIPTION TheµPG2015TBisaGaAsMMICforL,S-bandSPDT(SinglePoleDoubleThrow)switchwhichweredevelopedformobilephoneandanotherL,S-bandapplication. Thisdevicecanoperatefrequencyfrom0.5GHzto2.5GHz,havingthelowinsertionlossandhighisolation.Thisdeviceishouse

URF2015

POWERRECTIFIERS(20A,50-200V)

SwitchmodeFullPlasticDualUltrafastPowerRectifiers ...Designedforuseinswitchingpowersupplies,invertersandasfreewheelingdiodes.Thesestate-of-the-artdeviceshavethefollowingfeatures: ✱HighSurgeCapacity ✱LowPowerLoss,HighEfficiency ✱GlassPassivatedchipjunction

VL-CBR-2015

EmbeddedProcessingUnit

VL-CBR-2015

EmbeddedProcessingUnit

VP2015

10/100BASE-TXVOICEOVERIPMAGNETICS

WPM2015

P-ChannelMOSFET