TPPESD12VL1BA

Marking：12；Package：SDO-323；1-Line Bl-directional TVS Diode

Features *350Wpeakpulsepower(8/20ps) *Protectsonedataorpowerline *Ultralowleakage:nAlevel *Operatingvoltage:12V *Ultralowclampingvoltage *Complieswithfollowingstandards: ~IEC61000-4-2(ESD)immunitytest Airdischarge:+30kV Contactdischarge:£30kV ~IEC61000-

PESD12VL1BA

LowVCEsat(BISS)transistors

PESD12VL1BA

LowcapacitancebidirectionalESDprotectiondiodesin

PESD12VL1BA

Microprocessorbasedequipment

Features ■260Wpeakpulsepower(tp=8/20μs) ■Bidirectionalconfigurations ■Solid-statesilicon-avalanchetechnology ■Lowclampingvoltage ■Lowleakagecurrent ■IEC61000-4-2±30kVcontact±30kVair ■IEC61000-4-4(EFT)40A(5/50ns) ■IEC61000-4-5(Lightning)10A(8/20μs) Applic

PESD12VL1BA

LowcapacitancebidirectionalESDprotectiondiode

1.Generaldescription BidirectionalElectroStaticDischarge(ESD)protectiondiodeinaverysmallSOD323(SC-76)SMD plasticpackagedesignedtoprotectonesignallinefromthedamagecausedbyESDandother transients. 2.Featuresandbenefits •BidirectionalESDprotectionofoneline •

PESD12VL1BA

1-LineBi-directionalDiode

PESD12VL1BA-Q

LowcapacitancebidirectionalESDprotectiondiode

1.Generaldescription BidirectionalElectroStaticDischarge(ESD)protectiondiodeinaverysmallSOD323(SC-76)SMD plasticpackagedesignedtoprotectonesignallinefromthedamagecausedbyESDandother transients. 2.Featuresandbenefits •BidirectionalESDprotectionofoneline

PESD12VL1BCSL

ESDprotectiondevice

1.Generaldescription BidirectionalElectroStaticDischarge(ESD)protectiondiodeinaDFN1006-2(SOD882-S1) leadlessultrasmallSurface-MountedDevice(SMD)plasticpackagedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 2.Featuresandbenefits •

PESD12VL1BSL

ESDprotectiondevice

1.Generaldescription BidirectionalElectroStaticDischarge(ESD)protectiondiodeinaDFN1006-2(SOD882-S1) leadlessultrasmallSurface-MountedDevice(SMD)plasticpackagedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 2.Featuresandbenefits •B