丝印：65R280D；Package：TO-220；650V Super-Junction Power MOSFET

文件：893.4 Kbytes 页数：9 Pages

WUMC

紫光国微

超结功率 MOSFET

紫光国微

650V 0.28Ω N-channel MOSFET

 Description MME65R280Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to

文件：1.60394 Mbytes 页数：10 Pages

MGCHIP

650V 0.28ohm N-channel MOSFET

文件：2.88615 Mbytes 页数：10 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

无锡固电