MME65R280Q

650V 0.28Ω N-channel MOSFET

Description MME65R280QispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageoflowEMIto

MME65R280QRH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=13.8A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.28Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

MME65R280QRH

丝印：65R280Q；Package：TO-263；650V 0.28Ω N-channel MOSFET

Description MME65R280QispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageoflowEMIto

MME65R280QRH

650V N-Ch MOSFET

MME65R280QRH

丝印：65R280Q；Package：TO-263；650V 0.28ohm N-channel MOSFET