N-Channel Enhancement Mode MOSFET

Features DS = 20v + RDS(ON)=300mQ (typ.) @ VGS=2.5V + RDS(ON)=250mQ (typ.) @ VGS= 4.5 + ESD Protected up to 2KV

文件：2.18351 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

场效应管(MOSFET)

Techpublic

台舟电子

Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection

文件：218.81 Kbytes 页数：5 Pages

LRC

乐山无线电

Small Signal MOSFET 20 V, 238 mA, Single, N?묬hannel, Gate ESD Protection, SC??5

MOSFET – Single, N-Channel, Gate ESD Protection, Small Signal, SC-75 20 V, 238 mA Features • Low Gate Charge for Fast Switching • Small 1.6 x 1.6 mm Footprint • ESD Protected Gate • AEC−Q101 Qualified and PPAP Capable − NVA4001N • These Devices are Pb−Free and are RoHS Compliant Application

文件：61.02 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 20 V, 238 mA, Single, N?묬hannel, Gate ESD Protection, SC??5

MOSFET – Single, N-Channel, Gate ESD Protection, Small Signal, SC-75 20 V, 238 mA Features • Low Gate Charge for Fast Switching • Small 1.6 x 1.6 mm Footprint • ESD Protected Gate • AEC−Q101 Qualified and PPAP Capable − NVA4001N • These Devices are Pb−Free and are RoHS Compliant Application

文件：61.02 Kbytes 页数：6 Pages

ONSEMI

安森美半导体