UPA812T

NPNSILICONHIGHFREQUENCYTRANSISTOR

UPA812T

HIGH-FREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORWITHBUILT-IN2x2SC4227SMALLMINIMOLD

TheµPA812Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •LowNoise NF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA •HighGain |S21e|2=12dBTYP.@f=1GHz,VCE=3V,IC=7mA •ASmallMiniM

UPA812T

NPNSILICONHIGHFREQUENCYTRANSISTOR

UPA812T

SILICONTRANSISTOR

HIGH-FREQUENCYLOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR (WITHBUILT-IN2´2SC4227)SMALLMINIMOLD FEATURES •LowNoise NF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA •HighGain |S21e|2=12dBTYP.@f=1GHz,VCE=3V,IC=7mA •ASmallMiniMoldPackageAdopted

UPC812

HighStability,LowOffsetVoltageJ-FETInputDualOperationalAmplifier

FEATURES InputOffsetVoltage±1mV(TYP.)(±3mVMAX.) VIOTemperatureDrift±7μV/C(TYP.) InputBiasCurrent50pA(TYP.) SlewRate15V/μs(TYP.) UnityGainFrequency4MHz(TYP.) InputEquivalentNoiseVoltageDensity19nV/Hz(TYP.)(f=1kHz) Stableoperationagainst

UPC812

DUALJ-FETINPUTLOW-OFFSETOPRERATIONALAMPLIFIER

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

UPC812C

DUALJ-FETINPUTLOW-OFFSETOPRERATIONALAMPLIFIER

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

UTC812

MICROPROCESSORRESETIC

UZ812

POWERZENERS3WATT

VL812

USB3.0HubController