TPM2025Q-FC1R-S中文资料思瑞浦数据手册PDF规格书

Features

⚫ AEC-Q100 Grade-1 Qualified (TPM2025Q Only)

⚫ Dual Independent Channels

⚫ 5-V Single Supply with Optimized Output

Damping for Gan Reliability

⚫ 7-A Peak Source And 5-A Sink-Drive Current

⚫ 0.69-ns Minimum Input Pulse Width (Typical)

⚫ Low Propagation Delay (2-ns Typical)

⚫ Optimized Pinout for nanosecond-pulse-width

⚫ Fast Rise and Fall Times (0.45-ns and 0.45-ns

Typical)

⚫ <0.61-ns Typical Delay Matching Between Two

Channels

⚫ ESD Protection Exceeds JESD 22 – 6-kV HBM,

1.5-kV CDM

⚫ Available in Flip-Chip QFN2X2-10 Package

Applications

⚫ Laser Distance Measuring System

⚫ Automotive Lidar

⚫ Driver Monitoring System

⚫ GaN DC/DC Conversion System

Description

The TPM2025 / TPM2025Q family are low-side dualchannel ultra-highspeed gate drivers for GaN and

logic-level MOSFETs. It is optimized for high-speed

applications such as Lidar and high-density power

convertors with enhanced low propagation delay

design. The TPM2025’s 2-mm×2-mm flip-chip QFN

package minimizes parasitic inductance in the gate

driver power loop and achieves state-of-the-art

narrow pulse width as short as 0.69 ns. Channel

independent transient suppressors ensure reliable

operation with ultra-fast high-current output pulses.