Marking

For TAJ, TPS & THJ, the positive end of body has videcon readable polarity marking as shown in the diagram. Bodies are marked by indelible laser marking on top surface with capacitance value, voltage and LOT code. R and P case is an exception due to small size in which only the voltage and capacit

文件：62.77 Kbytes 页数：1 Pages

AVX

Mini Switcher

Features Miniature AC/DC Switching Power Modules PCB Mounting with Solder Pins or Chassis Mounting with Screw Terminals Single, Dual and Triple Output Models Universal Input 85-264 VAC, 47–400 Hz High Efficiency EMI meets EN 55022, Class B and FCC, Level B Low Ripple and Noise Short Cir

文件：132.68 Kbytes 页数：8 Pages

TRACOPOWER

Tantalum Ultra Low ESR Capacitor

文件：358.74 Kbytes 页数：5 Pages

AVX

丝印：TPM1002PY3；Package：SOT223；P-Channel Enhancement Mode Power MOSFET

Application Load/Power Switching Interfacing Switching Logic Level Shift

文件：1.5447 Mbytes 页数：4 Pages

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丝印：TPM10030PK3；Package：TO-252-3L；P-Channel Enhancement Mode MOSFET

FEATURES ® Vds=-100V ID=30A @ ROSON=40mO@Ves=-10V

文件：1.5975 Mbytes 页数：4 Pages

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丝印：TPM2001NY3；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

Features Vos = 200V Ib=10A @Ves = 10V Rosion) £1.35Q @Ves = 10V SOT-223 package.

文件：3.05464 Mbytes 页数：5 Pages

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丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65

Features Vbs =200V = 6.0A Roson)

文件：1.04375 Mbytes 页数：3 Pages

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丝印：TPM2007NK3；Package：TO-252-3L；200V N-Channel Enhancement Mode Power MOSFET

Features Vos = 200V,lp =5.5A Ros(on)

文件：2.082909 Mbytes 页数：5 Pages

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丝印：TPM3015PS8；Package：SOP-8；P-Channel Enhancement Mode MOSFET

APPLICATIONS Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.

文件：1.2067 Mbytes 页数：3 Pages

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丝印：TPM3019PS8；Package：SOP-8；P-Channel Enhancement Mode MOSFET

APPLICATIONS @ Power Management in Note book @ Portable Equipment @ Battery Powered System @ DC/DC Converter @ Load Switch @ LCD Display inverter

文件：3.62126 Mbytes 页数：5 Pages

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