丝印：TPH9R00CQ5；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) Fast reverse recovery time : trr = 40 ns (typ.) (2) Small reverse recovery charge : Qrr = 34 nC (typ.) (3) Small gate charge: QSW = 11.7 nC (typ.) (4) Low drain-source on-resistanc

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TOSHIBA

东芝

Power MOSFET (N-ch single 60V

Application Scope：High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers\n\nPolarity：N-ch\n\nGeneration：U-MOSⅩ-H\n\nInternal Connection：Single\n\nRoHS Compatible Product(s) (#)：Available\n\n • Fast reverse recovery time : trr = 40 ns(typ.)\n• Small gate charge: QSW = 11.7 nC(typ.)\n• Low leakage current: IDSS = 10 A(max)(VDS = 150 V)\n• Enhancement mode: Vth = 3.1 to 4.5 V(VDS = 10 V, ID = 1.0 mA);

Toshiba

东芝

SOPAdvance

TOSHIBA/东芝

上传：深圳庞田科技有限公司

A/N

TI

德州仪器

上传：深圳诚思涵科技有限公司

SOP8

TI/德州仪器

上传：深圳市澳亿芯电子科技有限公司