丝印：TPH5200FNH；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 44 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 250 V) (5

文件：261.6 Kbytes 页数：9 Pages

TOSHIBA

东芝

N-Channel MOSFET

FEATURES ·Drain Current -ID=26A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 52mΩ(Max)@VGS= 10V APPLICATIONS ·Switching Voltage Regulators ·DC-DC converter

文件：384.66 Kbytes 页数：3 Pages

ISC

无锡固电

Power MOSFET (N-ch 150V VDSS 250V)

Application Scope：High efficiency DC/DC converters / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 27 A \nPower Dissipation PD 78 W \nDrain-Source voltage VDSS 250 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package

Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features

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VishayVishay Siliconix

威世科技

5A Schottky Barrier Rectifiers

文件：152.89 Kbytes 页数：4 Pages

TAITRON

GaAs Infrared Emitting Diodes in ø 5 mm (T–1 3/4) Package

文件：86.81 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技