TPH5200FNH

Marking：TPH5200FNH；Package：SOP；MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=44mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (5

TPH5200FNH

N-Channel MOSFET

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=52mΩ(Max)@VGS=10V APPLICATIONS ·SwitchingVoltageRegulators ·DC-DCconverter

TSHA520

GaAlAsInfraredEmittingDiodesinø5mm(T–13/4)Package

Description TheTSHA520.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Features

TSR520

5ASchottkyBarrierRectifiers

TSUS520

InfraredEmittingDiode,950nm,GaAs

TSUS520

GaAsInfraredEmittingDiodesinø5mm(T–13/4)Package

UF520

ULTRAFASTRECOVERYRECTIFIER

UltraFastRecoveryRectifiers ●UltraFastRecovery ●175°CJunctionTemperature ●VRRM100to200Volts ●5AmpCurrentRating ●tRR30nsMax.

UF520

9.2A,100VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTCUF520isanN-channelenhancementpowerMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithhighInputImpedanceandhighswitchingspeed. ThisUTCUF520issuitableformotordrivers,switchingconvertors,switchingregulators,relaydriversanddriversfor

UFS520

ULTRAFASTRECOVERYRECTIFIERS

ULTRAFASTRECOVERYRECTIFIERS ULTRAFASTRECOVERY 175°CJUNCTIONTEMPERATURE VRRM100to200VOLTS 5AMPCURRENTRATING tRR50nSMAX

UPS520

SCHOTTKYBARRIERRECTIFIER0.5AMP,20VOLT