丝印：TPH2010FNH；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 168 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 250 V) (

文件：227.11 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (N-ch 150V VDSS 250V)

Application Scope：High efficiency DC/DC converters / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 10 A \nPower Dissipation PD 42 W \nDrain-Source voltage VDSS 250 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

Serial I/F Controlled 9-Channel Motor-Driver

文件：1.51713 Mbytes 页数：70 Pages

TI

德州仪器

MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 168 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 250 V) (

文件：234.65 Kbytes 页数：9 Pages

TOSHIBA

东芝

POWER-DISTRIBUTION

文件：366.93 Kbytes 页数：17 Pages

TI

德州仪器