Multi-EPI超结功率MOSFET

紫光国微

Robust Gate Oxide Technology

文件：168.81 Kbytes 页数：7 Pages

SEMIHOW

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.23 Kbytes 页数：2 Pages

ISC

无锡固电

700V CoolMOS짧 CE Power Transistor

文件：988.45 Kbytes 页数：14 Pages

INFINEON

英飞凌