Power MOSFET (N-ch dual)

Application Scope：Mobile equipments / Motor drivers\nPolarity：N-ch×2\nGeneration：U-MOSⅥ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 马来西亚 Drain current (Q1) ID 6.5 A \nDrain current (Q2) ID 6.5 A \nPower Dissipation PD 1.48 W \nDrain-Source voltage (Q1) VDSS 30 V \nDrain-Source voltage (Q2) VDSS 30 V \nGate-Source voltage (Q1) VGSS +/-20 V \nGate-Source voltage (Q2) VGSS +/-20 V ;

Toshiba

东芝

Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications

文件：842.68 Kbytes 页数：7 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications ● Small footprint due to small and thin package ● Low drain-source ON resistance: RDS (ON) = 30 mΩ (typ.) ● High forward transfer admittance: |Yfs| = 10 S (typ.) ● Low leakage current: IDSS = 10 μA (max

文件：293.05 Kbytes 页数：7 Pages

TOSHIBA

东芝

Dual N-Channel 25-V (D-S) MOSFET

文件：965.55 Kbytes 页数：8 Pages

VBSEMI

微碧半导体