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TPCS8201

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOS)

LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCs Smallfootprintduetosmallandthinpackage Lowdrain-sourceONresistance:RDS(ON)=22mΩ(typ.) Highforwardtransferadmittance:|Yfs|=13S(typ.) Lowleakagecurrent:IDSS=10µA(max)(VDS=20V) Enha

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

VSC8201

LANDISCRETETRANSFORMERMODULES

LANFILTEREDCONNECTORS LANGIGABITICCROSSREFERENCE LAN10/100BASE-TXICCROSSREFERENCE LAN10BASE-TICCROSSREFERENCE

pulse

Pulse A Technitrol Company

VSC8201

SinglePort10/100/1000BASE-Tand1000BASE-XPHY

Introduction ThispurposeofthisapplicationnoteinconjunctionwiththeVSC8201DatasheetistoprovideinformationtoassistinthedesignandlayoutoftheVSC8201GigabitEthernetTransceiver. PowerSupplyOrganizationandDecoupling TheVSC8201requiresa3.3vanda1.5vpowersu

VITESSE

Vitesse Semiconductor Corporation

VSC8201DL

SinglePort10/100/1000BASE-Tand1000BASE-XPHY

Introduction ThispurposeofthisapplicationnoteinconjunctionwiththeVSC8201DatasheetistoprovideinformationtoassistinthedesignandlayoutoftheVSC8201GigabitEthernetTransceiver. PowerSupplyOrganizationandDecoupling TheVSC8201requiresa3.3vanda1.5vpowersu

VITESSE

Vitesse Semiconductor Corporation

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