Power MOSFET (P-ch single)

Application Scope：Mobile equipments / Motor drivers\nPolarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID -4.5 A \nPower Dissipation PD 1.96 W \nDrain-Source voltage VDSS -40 V \nGate-Source voltage VGSS -20/+10 V ;

Toshiba

东芝

3 V, SILICON MMIC FREQUENCY UP-CONVERTER

DESCRIPTION The UPC8106T and UPC8109T are L-Band Frequency UpConverters manufactured using the NESAT III MMIC process. The UPC8106T was designed for low distortion while the UPC8109T was designed for low current consumption. Operation from a 3 volt supply voltage makes this device ideal for handh

文件：112.58 Kbytes 页数：4 Pages

NEC

瑞萨

SILICON RFIC HI-IP3 FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER

文件：121.05 Kbytes 页数：8 Pages

NEC

瑞萨

SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR TELEPHONE

DESCRIPTION The µPC8163TB is a silicon monolithic integrated circuit designed as frequency up-converter for cellular telephone transmitter stage. The µPC8163TB has improved intermodulation performance and smaller package. The µPC8163TB is manufactured using NEC’s 20 GHz fT NESATTMlll silicon bip

文件：133.76 Kbytes 页数：16 Pages

NEC

瑞萨