3 V, SILICON MMIC FREQUENCY UP-CONVERTER

DESCRIPTION The UPC8106T and UPC8109T are L-Band Frequency UpConverters manufactured using the NESAT III MMIC process. The UPC8106T was designed for low distortion while the UPC8109T was designed for low current consumption. Operation from a 3 volt supply voltage makes this device ideal for handh

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NEC

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • High output frequency : fRFout = 0.8 to 2.5 GHz • High-density surface mounting : 6-pin super minimold package • Supply voltage : VCC = 2.7 to 3.3 V • Higher IP3 : OIP3 = +10 dBm @ fRFout = 1.9 GHz

文件：419.18 Kbytes 页数：34 Pages

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SILICON MMIC 2.5 GHz FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER

DESCRIPTION The µPC8172TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless transceiver transmitter stage. This IC is manufactured using NEC’s 30 GHz fmax. UHS0 (Ultra High Speed Process) silicon bipolar process. This IC is as same circuit current as conv

文件：79.01 Kbytes 页数：7 Pages

NEC

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SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The µPC8106TB and µPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for cellular/cordless telephone transmitter stage. The µPC8106TB features improved intermodulation and µPC8109TB features low current consumption. From these two version, you can c

文件：185.13 Kbytes 页数：24 Pages

NEC

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SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR TELEPHONE

DESCRIPTION The µPC8163TB is a silicon monolithic integrated circuit designed as frequency up-converter for cellular telephone transmitter stage. The µPC8163TB has improved intermodulation performance and smaller package. The µPC8163TB is manufactured using NEC’s 20 GHz fT NESATTMlll silicon bip

文件：133.76 Kbytes 页数：16 Pages

NEC

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SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The µPC8106TB and µPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for cellular/cordless telephone transmitter stage. The µPC8106TB features improved intermodulation and µPC8109TB features low current consumption. From these two version, you can c

文件：185.13 Kbytes 页数：24 Pages

NEC

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丝印：C2G；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Recommended operating frequency : fRFout = 0.4 to 2.0 GHz, fIFin = 100 to 400 MHz • Supply voltage : VCC = 2.7 to 5.5 V • High-density surface mounting : 6-pin super minimold package • Low current consumption : ICC = 9 mA TYP. @ mPC8106TB ICC = 5 mA TYP. @ mPC8109TB • Minimized ca

文件：318.3 Kbytes 页数：26 Pages

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3 V, SILICON MMIC FREQUENCY UP-CONVERTER

DESCRIPTION The UPC8106T and UPC8109T are L-Band Frequency UpConverters manufactured using the NESAT III MMIC process. The UPC8106T was designed for low distortion while the UPC8109T was designed for low current consumption. Operation from a 3 volt supply voltage makes this device ideal for handh

文件：112.58 Kbytes 页数：4 Pages

NEC

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SILICON RFIC HI-IP3 FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER

文件：121.05 Kbytes 页数：8 Pages

NEC

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