TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode

High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Built-in schottky barrier diode Low forward voltage: VDSF = −0.6 V (max) • High-speed switching • Small gate charge: QSW = 8.4 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 4.

文件：217.01 Kbytes 页数：8 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Power MOSFET (N-ch single VDSS 30V)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：N-ch + SBD\nGeneration：U-MOSⅤ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 17 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS 30 V ;

Toshiba

东芝

Glass Passivated Ultra Fast Recovery Rectifier

文件：950.52 Kbytes 页数：2 Pages

YENYO

元耀科技

Glass Passivated Ultra Fast Recovery Rectifier

文件：851.59 Kbytes 页数：2 Pages

YENYO

元耀科技

Glass Passivated Ultra Fast Recovery Rectifier

Features ◆ Low forward voltage drop ◆ Fast switching for high efficiency ◆ High current capability ◆ High surge current capability ◆ Low reverse leakage current

文件：46.86 Kbytes 页数：2 Pages

COMCHIP

典琦