竊큀SHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications

High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications • Built-in schottky barrier diode Low forward voltage: VDSF = 0.6V(Max.) • High-speed switching. • Small gate charge.: QSW ＝ 11 nC(Typ.) • Low drain-source ON-resistance: RDS (ON) = 4.3

文件：484.96 Kbytes 页数：8 Pages

TOSHIBA

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：993.39 Kbytes 页数：9 Pages

VBSEMI

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ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications

Toshiba

东芝

High Efficiency DC-DC Converter Applications Notebook PC Applications

High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Built-in a schottky barrier diode Low forward voltage: VDSF = −0.6 V (max) • High-speed switching • Small gate charge: QSW = 8.6 nC (typ.) • Low drain-source ON-resistance: RDS (ON) =

文件：208.92 Kbytes 页数：8 Pages

TOSHIBA

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N-Channel 30 V (D-S) MOSFET

文件：1.11174 Mbytes 页数：7 Pages

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

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