TPC8A01中文资料东芝数据手册PDF规格书

Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－ MOSⅢ )

Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON

N CHANNEL MOS TYPE(U－ MOSⅢ )

DC-DC CONVERTER

Notebook PC

Portable Machines and Tools

• Includes Schottky Barrier Diode Type. (Q2)

Low Forward Voltage: VDSF=0.6V(Max.)

• Small footprint due to small and thin package.

• High Speed Switching.(Q1)

• Small Gate Charge.(Q1): Qg＝ 17nC(Typ.)

• Low drain-source ON resistance(Q2) RDS (ON) = 13 mΩ (typ.)

• High forward transfer admittance(Q2): |Yfs| = 11 S (typ.)

• Low leakage current. (Q1): IDSS = 10 µA(Max.) (VDS = 30 V)

(Q2): IDSS = 100 µA(Max.) (VDS = 30 V)

• Enhancement-mode

: (Q1) Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA)

: (Q2) Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA)