TPC8402中文资料东芝数据手册PDF规格书

厂商型号	TPC8402
功能描述	TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U-MOSII)
文件大小	719.84 Kbytes
页面数量	11 页
生产厂商	TOSHIBA
中文名称	东芝
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2026-2-3 15:07:00
人工找货	TPC8402价格和库存，欢迎联系客服免费人工找货

Lithium Ion Secondary Battery Applications

Notebook PCs

Portable Equipment Applications

● Low drain−source ON resistance

: P Channel RDS (ON) = 27 mΩ (typ.)

N Channel RDS (ON) = 37 mΩ (typ.)

● High forward transfer admittance

: P Channel |Yfs| = 7 S (typ.)

N Channel |Yfs| = 6 S (typ.)

● Low leakage current

: P Channel IDSS = −10 µA (VDS = −30 V)

N Channel IDSS = 10 µA (VDS = 30 V)

● Enhancement−mode

: P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA)

N Channel Vth = 0.8~2.0 V (VDS = 10 V, ID = 1mA)

型号：
TPC8402
制造商：
TOSHIBA
制造商全称：
Toshiba Semiconductor
功能描述：
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type(MOSVI/U−MOSII)