首页 >TPC8303(3.45)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIV) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIV) NotebookPCApplications PortableEquipmentApplications •Lowdrain-sourceONresistance:RDS(ON)=43mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=6.0S(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(VDS=−20V) •Enhancement-model:Vth=−0.45to−1.2V | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableMachinesandTools | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII) LithiumIonBatteryApplications NotebookPCApplications PortableMachinesandTools •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=15mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=18S(typ.) •Lowleakagecurrent:IDSS=−10μA(max)( | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableMachinesandTools | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
6MP30xAIPTZCamerawithbuilt-inwiper •Max.6MPresolution •5~150mm(30x)zoom(digital32x,total960xzoom) •Day&Night(ICR),extremeWDR,DIS(Built-ingyrosensor) •IntelligentAnalytics,Objectautotracking(Person/Vehicle),Targetlocktracking •H.264,H.265,MJPEGcodec,WiseStreamII •IP66,IK10,NEMA4X,NEMA-TS2 | HANWHAVISIONHanwha Vision Co., Ltd. All rights Reserved. 韩华韩华集团 | HANWHAVISION |
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