MOSFETs Silicon P-Channel MOS (U-MOS)

Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON)= 17 mΩ(typ.) (VGS= -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth= -0.8 to -2.0 V (VDS= -10 V, ID= -0.2 mA) Applications • Lithi

文件：265.76 Kbytes 页数：9 Pages

TOSHIBA

东芝

P-Channel 30-V (D-S) MOSFET

文件：1.00556 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel MOSFET uses advanced trench technology

文件：1.1663 Mbytes 页数：4 Pages

DOINGTER

杜因特

Power MOSFET (P-ch single)

Application Scope：Lithium-Ion secondary batteries / Power management switches\nPolarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID -9 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS -30 V \nGate-Source voltage VGSS -25/+20 V ;

Toshiba

东芝