Power transistor for high-speed switching applications

Application Scope：MOS gate drivers\nPolarity：NPN + PNP\nRoHS Compatible Product(s) (#)：Available Collector Current (Q1) IC 1.0 A \nCollector Current (Q2) IC -0.7 A \nCollector Current (Q1) ICP 2.0 A \nCollector Current (Q2) ICP -2.0 A \nCollector power dissipation (Q1/Q2) (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 0.5 W \nCollector-Base Voltage (Q1) VCBO 100 V \nCollector;

Toshiba

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type

文件：233.52 Kbytes 页数：7 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

Application Scope：MOS gate drivers\nPolarity：NPN + PNP\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Collector Current (Q1) IC 1.0 A \nCollector Current (Q2) IC -0.7 A \nCollector Current (Q1) ICP 5.0 A \nCollector Current (Q2) ICP -5.0 A \nCollector power dissipation (Q1/Q2) (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 0.5 W \nCollector-Base Voltage (Q1) VCBO 100 V \nCollector;

Toshiba

东芝