TO-263AB数据手册Renesas中文资料规格书

描述 Description

The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is development type number TA49316. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056).
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

特性 Features

• 5.3A, 1200V, TC = 25°C
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Temperature Compensating SABER™ Model
   Thermal Impedance SPICE Model www.intersil.com/
• Related Literature
   - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”