PNP High Voltage Amplifier

This device is designed for use as high voltage drivers requiring collector currents to 100 mA. Sourced from Process 76. See MPSA92 for characteristics.

ONSEMI

安森美半导体

PNP High Voltage Amplifier

This device is designed for use as high voltage drivers requiring collector currents to 100 mA. Sourced from Process 76. See MPSA92 for characteristics.

文件：25.83 Kbytes 页数：2 Pages

Fairchild

仙童半导体

Package：TO-226-3，TO-92-3 标准主体（!--TO-226AA）；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 200V 0.1A TO226-3

ONSEMI

安森美半导体

Electrical Specifications at 25oC

Zener Diodes Electrical Specifications at 25°C

文件：450.3 Kbytes 页数：1 Pages

AMMSEMI

N- and P-Channel 40V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive

文件：1.08665 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

N- and P-Channel 40V (D-S) MOSFET

文件：1.06639 Mbytes 页数：14 Pages

VBSEMI

微碧半导体