40 A 800 V high temperature SCR thyristors in TO-220 package

Features • High junction temperature: Tj = 150 °C • 800 V VDRM / VRRM • 900 V VDSM / VRSM • Low IGT: 15 mA • High static immunity dV/dt = 1000 V/μs at 150 °C • High turn-on rise dI/dt at 200 A/μs • Halogen-free molding, lead-free plating • ECOPACK2 compliant Application • Inrush curr

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STMICROELECTRONICS

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40A 800 V High Temperature SCR in TO220-AB insulated package

Thanks to its junction temperature Tj up to 150 °C, the TN4015H-8I offers high thermal performance operation up to 40 A RMS in an insulated TO-220AB package.\n\n Its trade-off noise immunity (dV/dt = 1000 V/μs) versus its gate triggering current (IGT = 15 mA) and its turn-on current rise (dI/dt = 20 • High junction temperature: Tj = 150 °C \n• 900 V VDSM / VRSM \n• High static immunity dV/dt = 1000 V/μs at 150 °C \n• Halogen-free molding, lead-free plating \n• Insulated package TO-220AB: \n•Insulated voltage: 2500 VRMS \n•Complies with UL 1554 (file ref. 81734);

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INTEL(英特尔)

上传：深圳市盈慧通电子有限公司

INTEL(英特尔)

上传：深圳市盈慧通电子有限公司

INTEL(英特尔)

上传：深圳市盈慧通电子有限公司