RF AMPLIFIER MODEL

文件：39.96 Kbytes 页数：1 Pages

APITECH

N-Ch MOSFET

文件：820.53 Kbytes 页数：6 Pages

WIINSOK

微硕半导体

N-Channel MOSFET uses advanced SGT to minimize on-state resistance

文件：2.05487 Mbytes 页数：5 Pages

DOINGTER

杜因特

Up to 1.5 A Constant Current Switching Regulator for LEDs with ON/OFF Function

文件：1.14512 Mbytes 页数：20 Pages

ONSEMI

安森美半导体

V.32 FCC EMBEDDED DIRECT ACCESS ARRANGEMENT

Description The Si3066 is an integrated direct access arrangement (DAA) for use with an integrated DAA system-side module. It includes a V.32 quality codec, dc termination, ac termination, and an integrated hybrid, eliminating the need for an analog front end (AFE), isolation transformer, relays,

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SILABS

芯科科技

3.3-3.8GHz 2W Power Amplifier

Product Description Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated wit

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SIRENZA