丝印：19G；Package：UQFN；6-GHz, 2-Channel, 2:1 Switch, With Power-off Isolation

文件：1.74798 Mbytes 页数：23 Pages

TI

德州仪器

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA. Features ■ High voltage capability ■ Low

文件：126.12 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features High voltage, high speed switching, wide SOA. Applications Fluorescent lamp, electronic ballast, electronic transformer.

文件：859.64 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA. Features ■ High voltage capability ■ Low

文件：137.07 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体