High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA. Features ■ High voltage capability ■ Low

文件：137.07 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

High voltage capability

文件：387.74 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

High Voltage NPN Transistor

Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor

文件：466.78 Kbytes 页数：5 Pages

TSC

台湾半导体

High Voltage NPN Transistor

Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor

文件：432.13 Kbytes 页数：6 Pages

TSC

台湾半导体