TMUX136MRSER

6-GHz, 2-Channel, 2:1 Switch, With Power-off Isolation

136C

CENTIGRID®ESTABLISHEDRELIABILITYMILITARYDPDTSENSITIVECMOSCOMPATIBLE

DESCRIPTION Thesensitive136CCentigrid®relayisanultraminiature,hermetically sealed,armaturerelaycapableofbeingdirectlydrivenbymostIClogic families.Its.100”gridspacedterminals,whichprecludetheneedfor spreaderpads,makeitidealforapplicationswhereextremepackagi

136D

WetTantalumCapacitorsTantalum-CasewithGlass-to-Tantalum

136JE

CarbonCompositionMoldedOD/OFSeries(5Tol.)OASeries(10)

136RVI

AluminumElectrolyticCapacitorsRadialVeryLowImpedance

FEATURES •VerylowimpedanceandlowESR •Verylongusefullife: 4000hto10000hat105°C,veryhighreliability •Excellentripplecurrentcapability •Polarizedaluminumelectrolyticcapacitors,non-solid electrolyte •Radialleads,cylindricalaluminumcasewithpressure relief,i

136RVI

AluminumCapacitorsRadialVeryLowImpedance

136RVI

AluminumElectrolyticCapacitors

136RVI

AluminumelectrolyticcapacitorsRadial,VeryLowImpedance

AB136

Assemblyandhandlinginformation

AD136

GERMANIUMPOWERTRANSISTORS

AM-136PIN

HighPerformanceAmplifier,20dBGain,10-200MHz

AM-AMC-136

HighPerformanceAmplifier,20dBGain,10-200MHz

AMC-136SMA

HighPerformanceAmplifier,20dBGain,10-200MHz

AMW136

ThisdocumentprovidesinformationontheAMWx36802.11b/g/nWi-FinetworkingmodulefromZentri.

GeneralFeatures Self-containedultra-lowpowerWi-Fimodulewith microcontrollerandsupportforZentriOS-W firmware(AMW036/AMW136)andZentriOS-WZ firmware(AMW136),includingindustrystandard SSL/TLSsecureTCP/IPnetworkstack. IntegratedSPI-serialflashforsoftwareupgrades and

AN136

PRODUCTIONPROGRAMMINGOPTIONSFORSILICONLABSDEVICES

AN-136

ANEWGENERATIONOFTAGSRAMS-THEIDT71215AND

INTRODUCTION The71215and71216representanewgenerationofintegratedTagSRAMs.JustasearlierTagSRAMssuchasthe71B74werebettersuitedfortagapplicationsthanconventionalSRAMs,the71215/16goastepfurtherbyintegratingnewfeaturestosignificantlyeasethedesignofhighper

ASJ-136-X

STEREOPHONEJACK

BC136

GeneralPurposeTransistors

BD136

GERMANIOVETRANZISTORY

BD136

SiliconPNPPowerTransistor

DESCRIPTION •DCCurrentGain- :hFE=40(Min)@lc=-0.15A •Collector-EmitterSustainingVoltage- :VCEO(sus)=-45V(Min) •ComplementtotypeBD135 APPLICATIONS •Designedforuseasaudioamplifiersanddriversutilizing complementaryorquasicomplementarycircuits.