IRF7307

MOSFET

Features N-Ch： VDS(V)=20V RDS(ON)

IRF7307

GenerationVTechnologyUltra

GenerationVTechnologyUltra LowOn-Resistance DualNandPChannelMosfet SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free 100 Features VDS(V)=20V RDS(ON)53m(VGS=4.5V) RDS(ON)70m(VGS=2.7V) VDS(V)=-20V RDS(ON)m(VGS=-4.5V)
RDS(ON)140m(VGS=-2.7V) N-

IRF7307

PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF7307PBF

GENERATIONVTECHNOLOGY

IRF7307PBF

DualNandPChannelMospet

IRF7307PBF

HEXFETPOWERMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF7307QPBF

HEXFETPowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,theseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMOSFETsarea150°Cj

IRF7307TR

GenerationVTechnologyUltra

GenerationVTechnologyUltra LowOn-Resistance DualNandPChannelMosfet SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free 100 Features VDS(V)=20V RDS(ON)53m(VGS=4.5V) RDS(ON)70m(VGS=2.7V) VDS(V)=-20V RDS(ON)m(VGS=-4.5V)
RDS(ON)140m(VGS=-2.7V) N-

IRF7307TR

MOSFET

Features N-Ch： VDS(V)=20V RDS(ON)

IRF7307TRPBF

HEXFET짰PowerMOSFET