MicroAmpere High Frequency Response Bipolar Latching Magnetic Switch Sensor

Description TMR1202/TMR1208 is a bipolar latching magnetic switch integrated the tunnel magnetoresistance (TMR) magnetic sensor and CMOS circuitry, which is able to detect the change of magnetic field and output high and low voltage signals for high accuracy position detection. Unlike Hall/

文件：1.40579 Mbytes 页数：10 Pages

MULTIDIMENSION

多维科技

双极锁存型微功耗磁阻开关 水表汽表应用磁阻开关

【水表，气表微功耗高频磁阻开关】TMR1202微功耗磁阻开关是一款集成了隧道磁阻（TMR）传感器和CMOS技术，为高灵敏度、高速、低功耗、高精度应用而开发的双极磁开关。 TMR1202微功耗磁阻开关采用高精度推挽式半桥TMR磁传感器和CMOS集成电路，包括TMR电压发生器、比较器、施密特触发器和CMOS输出电路，能将变化的磁场信号转化为数字电压信号输出。TMR1202微功耗磁阻开关通过内部电压稳压器来提供温度补偿电源，并允许宽的工作电压范围。 \n\nTMR1202 微功耗磁阻开关以低电压工作、1 微安级的供电电流、高响应频率、宽的工作温度范围、优越的抗外磁干扰特性成为众多低功耗、高性能 （1）1.5uA 超低功耗\n\n（2）高频率响应可达1KHz\n\n（3）双极锁存型微功耗磁阻开关\n\n（4）高灵敏度，低开关点\n\n（5）TMR+CMOS 工艺\n\n（6）封装：TO-92S/UA、SOT-23/SO\n\n（7）宽工作电压范围\n\n（8）工作温度：-40~125°C\n\n磁阻开关;

Hallwee

霍尔微

超低功耗双极锁存型锁存型磁开关

TMR1202是一款集成了隧道磁阻(TMR)传感器和CMOS技术，为高灵敏度、高速、低功耗、高精度应用而开发的双极磁开关。TMR1202采用TMR磁传感器和CMOS集成电路，包括电压发生器、比较器、施密特触发器和CMOS输出电路，能将变化的磁场信号转化为数字电压信号输出。TMR1202通过内部电压稳压器来提供温度补偿电源，并允许宽的工作电压范围。TMR1202以低电压工作、1微安级的供电电流、高响应频率、宽的工作温度范围、优越的抗外磁干扰特性成为众多低功耗、高性能应用的理想选择。TMR1202采用两种封装形式：SOT23-3封装形式和TO-92S，所对应的产品型号分别为TMR1202S和TMR （1）隧道磁电阻(TMR)技术\n（2）1.5微安超低功耗\n（3）1kHz高频率响应\n（4）双极锁存型开关\n（5）高灵敏度，低开关点\n（6）宽工作电压范围\n（7）卓越的温度稳定性\n（8）优越的抗外磁场性能;

MDT

多维

Magnetic Tunnelling Magnetoresistive (TMR) Switch Sensors

AECI

MicroAmpere High Frequency Response Bipolar Latching Magnetic Switch Sensor

Description TMR1202/TMR1208 is a bipolar latching magnetic switch integrated the tunnel magnetoresistance (TMR) magnetic sensor and CMOS circuitry, which is able to detect the change of magnetic field and output high and low voltage signals for high accuracy position detection. Unlike Hall/

文件：1.40579 Mbytes 页数：10 Pages

MULTIDIMENSION

多维科技

MicroAmpere High Frequency Response Bipolar Latching Magnetic Switch Sensor

Description TMR1202/TMR1208 is a bipolar latching magnetic switch integrated the tunnel magnetoresistance (TMR) magnetic sensor and CMOS circuitry, which is able to detect the change of magnetic field and output high and low voltage signals for high accuracy position detection. Unlike Hall/

文件：1.40579 Mbytes 页数：10 Pages

MULTIDIMENSION

多维科技

MicroAmpere High Frequency Response Bipolar Latching Magnetic Switch Sensor

Description TMR1202/TMR1208 is a bipolar latching magnetic switch integrated the tunnel magnetoresistance (TMR) magnetic sensor and CMOS circuitry, which is able to detect the change of magnetic field and output high and low voltage signals for high accuracy position detection. Unlike Hall/

文件：1.40579 Mbytes 页数：10 Pages

MULTIDIMENSION

多维科技

MicroAmpere High Frequency Response Bipolar Latching Magnetic Switch Sensor

Description TMR1202/TMR1208 is a bipolar latching magnetic switch integrated the tunnel magnetoresistance (TMR) magnetic sensor and CMOS circuitry, which is able to detect the change of magnetic field and output high and low voltage signals for high accuracy position detection. Unlike Hall/

文件：1.40579 Mbytes 页数：10 Pages

MULTIDIMENSION

多维科技

MicroAmpere High Frequency Response Bipolar Latching Magnetic Switch Sensor

Description TMR1202/TMR1208 is a bipolar latching magnetic switch integrated the tunnel magnetoresistance (TMR) magnetic sensor and CMOS circuitry, which is able to detect the change of magnetic field and output high and low voltage signals for high accuracy position detection. Unlike Hall/

文件：1.40579 Mbytes 页数：10 Pages

MULTIDIMENSION

多维科技

MicroAmpere High Frequency Response Bipolar Latching Magnetic Switch Sensor

Description TMR1202/TMR1208 is a bipolar latching magnetic switch integrated the tunnel magnetoresistance (TMR) magnetic sensor and CMOS circuitry, which is able to detect the change of magnetic field and output high and low voltage signals for high accuracy position detection. Unlike Hall/

文件：1.40579 Mbytes 页数：10 Pages

MULTIDIMENSION

多维科技