TMR1202T

MicroAmpere High Frequency Response Bipolar Latching Magnetic Switch Sensor

Description TMR1202/TMR1208isabipolarlatchingmagnetic switchintegratedthetunnelmagnetoresistance (TMR)magneticsensorandCMOScircuitry,which isabletodetectthechangeofmagneticfieldand outputhighandlowvoltagesignalsforhighaccuracy positiondetection. UnlikeHall/

TPLD1202

TPLD1202-Q1AutomotiveProgrammableLogicDevicewithI2C/SPIand10-GPIO

1Features •Operatingcharacteristics –Extendedtemperaturerange:-40°Cto125°C –Widesupplyvoltagerange:1.71Vto5.5V –Qualifiedforautomotiveapplications •Configurablemacro-cells –2-,3-,and4-bitlookuptables –D-typeflip-flopsandlatcheswithandwithout reset/setopt

TPLD1202

TPLD1202ProgrammableLogicDevicewithI2C/SPIand10-GPIO

1Features •Operatingcharacteristics –Extendedtemperaturerange:-40°Cto125°C –Widesupplyvoltagerange:1.71Vto5.5V •Configurablemacro-cells –2-,3-,and4-bitlookuptables –D-typeflip-flopsandlatcheswithandwithout reset/setoption –8-bitshiftregister –16-bitpat

U1202

SurgeProtection

VACR1202

AluminumHousedCompactWirewoundResistor

FEATURES •Powerratingupto500W •Highoverloadcapacity •ProtectionIP20orIP65 •Enhancedhumidityprotection •Completehousedconstruction •Multipleconstructionforhigherpowerrating •Heatsinkmounting •Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VBE1202

N-Channel20-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC

VBE1202

N-Channel20-V(D-S)MOSFET

VBM1202M

PowerMOSFET

VBM1202M

PowerMOSFET

FEATURES •Surfacemount •Low-profilethrough-hole •Availableintapeandreel •DynamicdV/dtrating •150°Coperatingtemperature •Fastswitching •Fullyavalancherated

VBM1202N

N-Channel200V(D-S)175°CMOSFET

FEATURES •ThunderFET®powerMOSFET •Maximum175°Cjunctiontemperature •100RgandUIStested APPLICATIONS •Powersupplies: -Uninterruptiblepowersupplies -AC/DCswitch-modepowersupplies -Lighting •Synchronousrectification •DC/DCconverter •Motordriveswitch •DC/ACin