丝印：tMR；Package：SOT-143R；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

文件：159.22 Kbytes 页数：16 Pages

PHI

飞利浦

丝印：tMR；Package：SOT-143R；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range,

文件：306.4 Kbytes 页数：13 Pages

恩XP

丝印：tMR；Package：SOT-143R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：tMR；Package：SOT-143R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：tMR；Package：SOT-143R；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

文件：148.94 Kbytes 页数：16 Pages

PHI

飞利浦

丝印：tMR；Package：SOT-143R；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

文件：159.22 Kbytes 页数：16 Pages

PHI

飞利浦

丝印：tMR；Package：SOT-143R；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range,

文件：306.4 Kbytes 页数：13 Pages

恩XP

Low Resistance Value Resistor - Molded 2 and 4 Leads

Features: • Metal element resistors • Tinned copper leads • Low temperature coefficient • Molded bodies • TMR – Kelvin Bridge Test • MRS high stability version • Cut and formed product is available on selected sizes - contact Stackpole for details • 100 RoHS compliant and lead free without

文件：281.38 Kbytes 页数：5 Pages

SEI

斯塔克波尔

DC/DC Converter TMR 2 Series, 2 Watt

• Wide 2:1 input voltage range • Compact SIP-8 package • Small footprint • Remote On/Off control • Temperature range –40° to +85°C • High efficiency • Excellent load and line regulation • Indefinite short-circuit protection • I/O isolation 1600 VDC • 3-year product warrenty

文件：958.42 Kbytes 页数：4 Pages

TRACOPOWER

DC/DC Converter TMR 2 Series, 2 Watt

• Wide 2:1 input voltage range • Compact SIP-8 package • Small footprint • Remote On/Off control • Temperature range –40° to +85°C • High efficiency • Excellent load and line regulation • Indefinite short-circuit protection • I/O isolation 1600 VDC • 3-year product warrenty

文件：958.42 Kbytes 页数：4 Pages

TRACOPOWER