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20N65

20A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC20N65isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCUnisonic Technologies

友顺友顺科技股份有限公司

20N65

20AN-ChannelPowerMOSFET

Features ●RDS(ON)=0.35Ω ●Ultralowgatecharge(Typical150nC) ●Lowreversetransfercapacitance(CRSS=typical36pF) ●Fastswitchingcapability ●Avalancheenergyspecified ●Improveddv/dtcapability,highruggedness Application ●Powerfactorcorrection(PFC) ●Switchedm

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

20N65A

20A650VN-channelenhancementmodefieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

20N65Y

20Amps,650VoltsN-CHANNELMOSFET

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

AM20N65

MOSFET650V,20AN-CHANNEL

FEATURE •ProprietaryNewPlanarTechnology •RDS(ON),typ.typ.=0.38Ω@VGS=10V •LowGateChargeMinimizeSwitchingLoss •FastRecoveryBodyDiode DESCRIPTION TheAM20N65isavailableinTO220andTO220F Packages. APPLICATIONS •Adaptor •TVMainPower •SMPSPowerSupply •LCDPanel

AITSEMIAiT Semiconductor Inc.

创瑞科技AiT创瑞科技

CEB20N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEB20N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEB20N65SF

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. Fastreverserecoverytime. Drivecircuitscanbesimple.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CECS20N65LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,19A,RDS(ON)=180mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CECS20N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,19A,RDS(ON)=180mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

供应商型号品牌批号封装库存备注价格
GUOXINMICRO
21+
TO-220
4580
只做原装正品假一赔十!正规渠道订货!
询价
GUOXINMICRO
19+
TO-220
1000
进口原装现货假一赔万力挺实单
询价
GUOXINMICRO
25+
TO-220
880000
明嘉莱只做原装正品现货
询价
24+
2500
自己现货
询价
TOSHIBA
23+
SOP-14
5000
原装正品,假一罚十
询价
TOSHIBA/东芝
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
2023+
BGA
3000
进口原装现货
询价
TOSHIBA
24+
BGA
20000
低价现货抛售(美国 香港 新加坡)
询价
TOBITPO
24+
原装
2789
全新原装自家现货!价格优势!
询价
TOBITPO
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
更多TMP20N65H供应商 更新时间2025-5-13 17:07:00