SiC Schottky barrier diode

Application Scope：Power factor correction / Solar inverters / Uninterruptible power supplies / DC-DC converters\nNumber of Circuits：2\nInternal Connection：Common cathode\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Forward DC current IF(DC) 20 A \nRepetitive Peak Reverse Voltage VRRM 650 V ;

Toshiba

东芝

SiC Schottky Barrier Diode

文件：163.99 Kbytes 页数：5 Pages

TOSHIBA

东芝

Package：TO-247-3；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 650V TO247

Toshiba Semiconductor and Storage

SiC Schottky Barrier Diode

文件：308.21 Kbytes 页数：6 Pages

TOSHIBA

东芝

650V TRENCH GATE FIELD-STOP IGBT

 DESCRIPTION The UTC UTG20N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG20N65-S is suitable for the resonant or soft switching

文件：211.49 Kbytes 页数：5 Pages

UTC

友顺