TMF8801-1BM

Marking：5-digit-tracecode；Package：Optical-Module；Time-of-Flight Sensor

Features Modularpackage-2.2mmx3.6mmx1.0mm 21ºFOI Time-to-DigitalConverter(TDC) DirectTime-of-FlightMeasurement SinglePhotonAvalanchePhotodiode(SPAD) Histogrambasedarchitecture Dynamiccoverglasscalibration ReliableOperationunderdemandingusecases ReferenceSPAD

TMF8805

Time-of-flight sensor

Features Modularpackage-2.2mmx3.6mmx1.0mm Noinfluenceonmultiobjectreflections Time-to-DigitalConverter(TDC) DirectTime-of-FlightMeasurement SinglePhotonAvalanchePhotodiode(SPAD) Histogrambasedarchitecture Dynamiccoverglasscalibration Reliableoperationunderdem

TMF8805-1B

Marking：5-digit-tracecode；Package：Optical-module；Time-of-flight sensor

Features Modularpackage-2.2mmx3.6mmx1.0mm Noinfluenceonmultiobjectreflections Time-to-DigitalConverter(TDC) DirectTime-of-FlightMeasurement SinglePhotonAvalanchePhotodiode(SPAD) Histogrambasedarchitecture Dynamiccoverglasscalibration Reliableoperationunderdem

TMF8805-1BM

Marking：5-digit-tracecode；Package：Optical-module；Time-of-flight sensor

Features Modularpackage-2.2mmx3.6mmx1.0mm Noinfluenceonmultiobjectreflections Time-to-DigitalConverter(TDC) DirectTime-of-FlightMeasurement SinglePhotonAvalanchePhotodiode(SPAD) Histogrambasedarchitecture Dynamiccoverglasscalibration Reliableoperationunderdem

TMF8901B

Si RF LDMOS Transistor

□Features -Powergain GP=12.4dBatVDS=4.5V,IDset=200mA,f=470MHz GP=14.7dBatVDS=6.0V,IDset=200mA,f=470MHz -Outputpower POUT=32.4dBmatVDS=4.5V,IDset=200mA,f=470MHz POUT=34.7dBmatVDS=6.0V,IDset=200mA,f=470MHz -Drai

TMF8901F

Si RF LDMOS Transistor

□Features -Powergain GP=12.5dBatVDS=4.5V,IDset=200mA,f=470MHz -Outputpower POUT=32dBmatVDS=4.5V,IDset=200mA,f=470MHz -Drainefficiency ηD=60(typ.) □Applications -VHFandUHFwidebandamplifier

TMF0.6

EM Clutch (with flange mounted field)

TMF1.2

EM Clutch (with flange mounted field)

TMF10

EM Clutch (with flange mounted field)

TMF1000A

Topstek Current Transducer