Si RF LDMOS Transistor

□ Features - Power gain GP = 12.4 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz GP = 14.7 dB at VDS = 6.0 V, IDset = 200 mA, f = 470 MHz - Output power POUT = 32.4 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz POUT = 34.7 dBm at VDS = 6.0 V, IDset = 200 mA, f = 470 MHz - Drai

文件：221.12 Kbytes 页数：5 Pages

AUK

Si RF LDMOS Transistor

□ Features - Power gain GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Output power POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Drain efficiency ηD = 60 (typ.) □ Applications - VHF and UHF wide band amplifier

文件：267.16 Kbytes 页数：5 Pages

AUK

TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)

Portable Equipment Applications Switching Applications • Small footprint due to small and thin package • High DC current gain : PNP hFE = 200 to 500 (IC = −0.1 A) :NPN hFE = 400 to 1000 (IC = 0.1 A) • Low collector-emitter saturation : PNP VCE (sat) = −0.

文件：253.25 Kbytes 页数：7 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝