Si RF LDMOS Transistor

□ Features - Power gain GP = 12.4 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz GP = 14.7 dB at VDS = 6.0 V, IDset = 200 mA, f = 470 MHz - Output power POUT = 32.4 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz POUT = 34.7 dBm at VDS = 6.0 V, IDset = 200 mA, f = 470 MHz - Drai

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AUK

Si RF LDMOS Transistor

□ Features - Power gain GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Output power POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Drain efficiency ηD = 60 (typ.) □ Applications - VHF and UHF wide band amplifier

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AUK

TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)

Portable Equipment Applications Switching Applications • Small footprint due to small and thin package • High DC current gain : PNP hFE = 200 to 500 (IC = −0.1 A) :NPN hFE = 400 to 1000 (IC = 0.1 A) • Low collector-emitter saturation : PNP VCE (sat) = −0.

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TOSHIBA

东芝

Wideband, Ring Demodulator

DESCRIPTION The SD8901 is a ring demodulator/balanced mixer. Designed to utilize Calogic’s ultra high speed and low capacitance lateral DMOS process. The SD8901 offers significant performance improvements over JFET and diode balanced mixers when low third order harmonic distortion has been a prob

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CALOGIC