FDD6670A

30VN-ChannelPowerTrenchMOSFET

FDD6670A

N-Channel,LogicLevel,PowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(

FDD6670A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=66A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

FDD6670A

30VN-ChannelMOSFET

Features ·RDS(ON)=8mW（VGS=10V） ·RDS(ON)=10mW（VGS=4.5V） ·Lowgatecharge ·FastSwitching ·Highperformancetrenchtechnologyforextremely lowRDS(ON) ·VDS(V)=-30V

FDD6670A

N-channelAdvancedModePowerMOSFET

Features VDS=40V,ID=150A RDS(ON)

FDD6670AL

30VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features •

FDD6670AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=84A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

FDD6670AL

N-channelAdvancedModePowerMOSFET

Features VDS=40V,ID=150A RDS(ON)

FDD6670AS

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDD6670ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6670ASincludesapatentedcombinationofaM

FDD6670AS

N-channelAdvancedModePowerMOSFET

Features VDS=40V,ID=150A RDS(ON)