TMCS1133资料使用说明书行情报价TI第20页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
TMCS1133X2A	文件：2.25784 Mbytes Page：36 Pages	TMCS1133 Precision 1 MHz Hall-Effect Current Sensor With ±1100V Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 75 ARMS • Robust reinforced isolation – Withstand isolation voltage: 5000 VRMS – Reinforced working voltage: 1100 VDC • High accuracy – Sensitivity error: ± 0.3 – Sensitivity drift: ± 20 ppm/°C – Offset error: ± 1 mV – Offset drift: ± 20 μV 文件：2.25784 Mbytes 页数：36 Pages	TI 德州仪器	TI
TMCS1133X3A	文件：2.25784 Mbytes Page：36 Pages	TMCS1133 Precision 1 MHz Hall-Effect Current Sensor With ±1100V Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 75 ARMS • Robust reinforced isolation – Withstand isolation voltage: 5000 VRMS – Reinforced working voltage: 1100 VDC • High accuracy – Sensitivity error: ± 0.3 – Sensitivity drift: ± 20 ppm/°C – Offset error: ± 1 mV – Offset drift: ± 20 μV 文件：2.25784 Mbytes 页数：36 Pages	TI 德州仪器	TI
TMCS1133X4A	文件：2.25784 Mbytes Page：36 Pages	TMCS1133 Precision 1 MHz Hall-Effect Current Sensor With ±1100V Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 75 ARMS • Robust reinforced isolation – Withstand isolation voltage: 5000 VRMS – Reinforced working voltage: 1100 VDC • High accuracy – Sensitivity error: ± 0.3 – Sensitivity drift: ± 20 ppm/°C – Offset error: ± 1 mV – Offset drift: ± 20 μV 文件：2.25784 Mbytes 页数：36 Pages	TI 德州仪器	TI
TMCS1133X5A	文件：2.25784 Mbytes Page：36 Pages	TMCS1133 Precision 1 MHz Hall-Effect Current Sensor With ±1100V Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 75 ARMS • Robust reinforced isolation – Withstand isolation voltage: 5000 VRMS – Reinforced working voltage: 1100 VDC • High accuracy – Sensitivity error: ± 0.3 – Sensitivity drift: ± 20 ppm/°C – Offset error: ± 1 mV – Offset drift: ± 20 μV 文件：2.25784 Mbytes 页数：36 Pages	TI 德州仪器	TI
TMCS1133-Q1	文件：300 bytes Page：1 Pages	具有 AFR 和警报功能的汽车级 1MHz 霍尔效应电流传感器 The TMCS1133-Q1 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in AEC-Q100 qualified for automotive applications \n \nTemperature grade 1: –40°C to 125°C, TA\n \n\n \nFunctional Safety-Capable \n \nDocumentation available to aid functional safety system design\n \n\n \nHigh continuous current capability: 80ARMS\n \nRobust reinforced isolation\n \nHigh accuracy \n ;	TI 德州仪器	TI

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技术参数

Input offset current (±) (max) (mA)：
130
Input offset current drift (±) (typ) (µA/°C)：
867
Features：
Alert Function
Supply voltage (max) (V)：
5.5
Supply voltage (min) (V)：
3
Small-signal bandwidth (Hz)：
1000000
Sensitivity error (%)：
0.75
Sensitivity error drift (±) (max) (ppm/°C)：
50
Rating：
Catalog
Operating temperature range (°C)：
-40 to 125
Creepage (min) (mm)：
8.1
Clearance (min) (mm)：
8.1
Isolation rating：
Reinforced
Surge isolation voltage (VIOSM) (VPK)：
10000
封装：
SOIC (DVG)
引脚：
10
尺寸：
106.09 mm² 10.3 x 10.3

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	TMCS1133B4AQDVGRQ1	TI	25+	N/A	8525	样件支持,可原厂排单订货!	询价
深圳市得捷芯城科技有限公司	TMCS1133B4AQDVGRQ1	TI	25+	N/A	8577	正规渠道,免费送样。支持账期,BOM一站式配齐	询价

更多TMCS1133供应商更新时间2026-1-20 23:00:00

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